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| SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V =3.4(Min.) Low Series Resistance Excellent Linearity (CV Curve) KDV275 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B 1 G K E A H 2 D J C I MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR Tj Tstg RATING 28 150 -55 150 1. ANODE 2. CATHODE UNIT V M M DIM A B C D E F G H I J K L M MILLIMETERS _ 2.50 + 0.1 _ 1.25 + 0.05 _ 0.90 + 0.05 0.30+0.06/-0.04 _ 1.70 + 0.05 MIN 0.17 _ 0.126 + 0.03 0~0.1 1.0 MAX _ 0.15 + 0.05 _ 0.4 + 0.05 2 +4/-2 4~6 USC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Voltage Reverse Current SYMBOL VR IR C1V Capacitance C2V C4V Capacitance Ratio Series Resistance K rS IR=10 A VR=16V VR=1V, f=1MHz VR=2V, f=1MHz VR=4V, f=1MHz C1V/C4V, f=1MHz CT=8pF, f=470MHz TEST CONDITION MIN. 20 15.40 8.50 3.60 3.4 TYP. 16.60 10.20 4.30 MAX. 5 17.90 11.90 5.05 0.7 pF UNIT V nA CLASSIFICATION OF CAPACITANCE GRADE GRADE A B C D E CAPACITANCE (C2V) 8.5 9.15 9.05~9.85 9.75 10.65 10.55~11.35 11.25~11.90 UNIT pF pF pF pF pF Marking Type Name Grade C 2003 1. 27 Revision No : 0 F L 1/2 KDV275 C T - VR 30 REVERSE CURRENT IR (A) CAPACITANCE C T (pF) Ta=25 C f=1MHz IR - VR 100p Ta=85 C 10p Ta=55 C 10 1p Ta=25 C 5 3 0 1 2 3 4 100f 10f 0 4 8 12 16 20 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) Q 500 300 FIGURE OF MERIT Q f=50MHz - VR 1 SERIES RESISTANCE r s () V R =4V Ta=25 C rs - f f=100MHz 100 50 30 f=300MHz f=470MHz 0.7 10 0 1 2 3 4 REVERSE VOLTAGE V R (V) 0.5 50 100 300 FREQUENCY f (MHz) 500 1K C(Ta)/C(25 C) - VR 1.10 VARIATION OF CAPACITANCE C(Ta)/C(25 C) 1.06 1.02 0.98 0.94 0.90 0 1 2 3 4 3K C/Ta - VR Ta=85 C C/Ta (ppm/ C) Ta=55 C Ta=25 C Ta=-15 C Ta=-55 C 1k 500 300 Ta=-55 C~+85 C f=1MHz 100 0 1 2 3 4 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) 2003 1. 27 Revision No : 0 2/2 |
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